Loading…
Correlation between structural and mechanical properties of silicon doped DLC thin films
Silicon doped diamond like carbon (Si-DLC) thin films were deposited on SiO2/Si substrates with different H2 flow rate. The deposited Si-DLC films were characterized by field emission scanning electron microscopy (FESEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and nanoindentation...
Saved in:
Published in: | Diamond and related materials 2018-02, Vol.82, p.25-32 |
---|---|
Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | Silicon doped diamond like carbon (Si-DLC) thin films were deposited on SiO2/Si substrates with different H2 flow rate. The deposited Si-DLC films were characterized by field emission scanning electron microscopy (FESEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and nanoindentation characterizations. The FESEM images reveal the smooth Si-DLC thin films at lower H2 flow rate, however, increased surface roughness with increasing H2 flow rate. The Raman spectroscopy of Si-DLC thin films confirmed carbon nanocluster decreasing from 60.4 to 49.3nm with increasing of H2 flow rates. The Raman signature at 796, 968 and 1530cm−1 correspond to transverse optic (TO), longitudinal optic (LO) and Si attachment to graphitic carbon respectively in the Si-DLC thin films. The maximum hardness and Young's modulus were 17.95GPa and 186.65GPa for 70sccm and 90sccm H2 flow rate respectably. The XPS results reveal Si at.% decreased from 18.91 to 14.15 of the Si-DLC thin films within creased by H2 flow rate.
[Display omitted]
•Microstructural analysis of Si-DLC at different H2 flow rate using FESEM•Investigation of mechanical properties of Si-DLC thin films such as hardness and Young modulus with different load•Structural investigation of Si-DLC thin films using Raman spectroscopy•Elastic and plastic behavior of Si-DLC at different load and H2 flow rate |
---|---|
ISSN: | 0925-9635 1879-0062 |
DOI: | 10.1016/j.diamond.2017.12.012 |