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Multifunctional Optoelectronic Device Based on an Asymmetric Active Layer Structure
A single device with a variety of capabilities is highly attractive for the increasing demands of complex and multifunctional optoelectronics. A hybrid heterojunction formed between CsPbBr3 halide perovskite and chalcogenide quantum dots is demonstrated. The heterojunction served as an asymmetric ac...
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Published in: | Advanced functional materials 2019-04, Vol.29 (17), p.n/a |
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Main Authors: | , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A single device with a variety of capabilities is highly attractive for the increasing demands of complex and multifunctional optoelectronics. A hybrid heterojunction formed between CsPbBr3 halide perovskite and chalcogenide quantum dots is demonstrated. The heterojunction served as an asymmetric active layer allows not only charge separation/exciton dissociation in a benign process, but also carrier injection/recombination with the suppression of bulk and interfacial nonradiative recombination. An individual device incorporating such a heterojunction is therefore implemented with an integration of proof‐of‐concept functions, including a voltage controllable multicolor light‐emitting diode, an exceptionally high photovoltage energy‐harvesting device, and an ultrafast photosensitive detector. The figures of merit of the light‐emitting diode remarkably surpass those of the corresponding single‐active‐layer device, particularly in terms of its bright electroluminescence and superior long‐term stability. The asymmetric active layer concept provides a feasible route to design efficient multifunctional and monofunctional devices in the future.
An asymmetric active layer within a single device is used to separate the charge injection and charge extraction independently. The individual device demonstrates a series of proof‐of‐concept functions, including a color‐tunable light‐emitting diode, an extremely high photovoltaic (1. 73 V) energy harvesting device, and an ultrafast (3. 4 µs) photosensitive detector. |
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ISSN: | 1616-301X 1616-3028 |
DOI: | 10.1002/adfm.201807894 |