Co3O4 thin films prepared by hollow cathode discharge

Semiconducting crystalline Co3O4 thin films were deposited on glass, stainless steel and Si substrates using three different PVD methods: (i) RF magnetron sputtering, (ii) high-power impulse magnetron sputtering (HiPIMS), and (iii) hollow cathode discharge (HCD). All layers were sputtered from pure...

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Bibliographic Details
Published in:Surface & coatings technology 2019-05, Vol.366, p.303-310
Main Authors: Olejníček, Jiří, Šmíd, Jiří, Perekrestov, Roman, Kšírová, Petra, Rathouský, Jiří, Kohout, Michal, Dvořáková, Michaela, Kment, Štěpán, Jurek, Karel, Čada, Martin, Hubička, Zdeněk
Format: Article
Language:English
Subjects:
Cathode sputtering
Chemical composition
Co3O4
Cobalt oxide
Cobalt oxides
Crystal structure
Crystallinity
Electrical properties
Hollow cathode discharge
Hollow cathodes
Magnetron sputtering
Morphology
Nozzles
Organic chemistry
Photovoltaic cells
Physical vapor deposition
Porosity
Raman spectroscopy
Silicon steels
Silicon substrates
Stainless steels
Thin films
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Summary:Semiconducting crystalline Co3O4 thin films were deposited on glass, stainless steel and Si substrates using three different PVD methods: (i) RF magnetron sputtering, (ii) high-power impulse magnetron sputtering (HiPIMS), and (iii) hollow cathode discharge (HCD). All layers were sputtered from pure cobalt target (or nozzle) in reactive atmosphere and post-annealed on air. Properties of deposited layers have been studied and discussed with respect to their potential applications. The surface morphology of the films was analyzed by SEM, their crystalline structure by XRD and Raman spectroscopy, chemical composition by EDS, electrical properties by Van der Pauw method and the specific surface area was measured by standard BET analysis. The layers prepared by the hollow cathode discharge compared to the magnetron-prepared films exhibited higher porosity, higher resistivity, higher activation energy, and higher deposition rate during the sputtering process. [Display omitted] •Co3O4 thin films were deposited by three different plasma sputtering methods.•The highest deposition rate was achieved for sputtering by hollow cathode.•Co3O4 films prepared by hollow cathode discharge were extremely porous.•Depending on the sputtering technology, the resistivity varies by up to 7 orders.
ISSN:0257-8972
1879-3347
DOI:10.1016/j.surfcoat.2019.03.010