On the Role of Interface States in AlGaN/GaN Schottky Recessed Diodes: Physical Insights, Performance Tradeoff, and Engineering Guidelines

In this paper, the impact of donor and acceptor states at the Schottky interface of fully recessed AlGaN/GaN Schottky diode is physically modeled using device TCAD and detailed experiments. This allowed us to develop physical insights into recessed AlGaN/GaN diode's reverse breakdown, reverse l...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2019-06, Vol.66 (6), p.2569-2576
Main Authors: Soni, Ankit, Shikha, Swati, Shrivastava, Mayank
Format: Article
Language:English
Subjects:
AlGaN/GaN diode
Aluminum gallium nitride
Aluminum gallium nitrides
Breakdown
Diodes
Electric breakdown
Fluorine
Gallium nitrides
GaN
GaN simulation
Guidelines
HEMT diode
Interface states
Leakage
power devices
Schottky diodes
Surface treatment
Tunneling
Wide band gap semiconductors
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Summary:In this paper, the impact of donor and acceptor states at the Schottky interface of fully recessed AlGaN/GaN Schottky diode is physically modeled using device TCAD and detailed experiments. This allowed us to develop physical insights into recessed AlGaN/GaN diode's reverse breakdown, reverse leakage, and ON-state performance as a function of interface states and provided design guidelines to engineer fully recessed AlGaN/GaN Schottky diode for the maximum reverse breakdown and least reverse leakage without compromising its ON-state performance. It has been observed that donor states are responsible for high reverse leakage and reduced breakdown performance in Schottky diodes. On the other hand, the presence of acceptor states at the interface improves the diode leakage and breakdown voltage. Experiments involve a number of dry and wet surface treatments to: 1) validate computational findings and 2) find ways to cure or passivate donor states affected Schottky interface/recessed region. The introduction of acceptor traps at the Schottky interface has been proposed and experimentally verified using the Fluorine implant to cure donor state-affected Schottky interface, which improves the breakdown and reverse leakage characteristics significantly.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2019.2912783