Low-frequency noise and defects in copper and ruthenium resistors

1.8-MeV proton irradiation to a fluence of 1014/cm2 does not significantly affect the resistance or low-frequency noise of copper or ruthenium resistors fabricated via modern microelectronic fabrication techniques used to form metal lines. The room-temperature noise of these Cu and Ru resistors is s...

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Bibliographic Details
Published in:Applied physics letters 2019-05, Vol.114 (20)
Main Authors: Fleetwood, D. M., Beyne, S., Jiang, R., Zhao, S. E., Wang, P., Bonaldo, S., McCurdy, M. W., Tőkei, Zs, DeWolf, I., Croes, Kristof, Zhang, E. X., Alles, M. L., Schrimpf, R. D., Reed, R. A., Linten, D.
Format: Article
Language:English
Subjects:
Applied physics
Copper
Electromigration
Fluence
Nanofabrication
Noise
Proton irradiation
Resistors
Ruthenium
Temperature dependence
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Summary:1.8-MeV proton irradiation to a fluence of 1014/cm2 does not significantly affect the resistance or low-frequency noise of copper or ruthenium resistors fabricated via modern microelectronic fabrication techniques used to form metal lines. The room-temperature noise of these Cu and Ru resistors is surprisingly similar to that of Cu and Pt metal lines and wires fabricated using late-1970s nanofabrication techniques; however, measurements of the temperature dependence of the noise show that the defect kinetics are quite different among the various materials. A large increase in the noise magnitude observed above 200 K in Cu but not in Ru is consistent with the superior resistance to electromigration that Ru lines have shown, relative to Cu.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5093549