Quantum well stabilized point defect spin qubits

Defect-based quantum systems in in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room...

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Bibliographic Details
Published in:arXiv.org 2020-04
Main Authors: Ivády, Davidsson, J, Delegan, N, Falk, A L, Klimov, P V, Whiteley, S J, Hruszkewycz, S O, Holt, M V, Heremans, F J, Son, N T, Awschalom, D D, Abrikosov, I A, Gali, A
Format: Article
Language:English
Subjects:
Color centers
Cycles
Divacancies
High temperature
Point defects
Quantum wells
Qubits (quantum computing)
Semiconductors
Silicon carbide
Stability
Stacking faults
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Summary:Defect-based quantum systems in in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engineered quantum well can stabilize the charge state of a qubit. Using density-functional theory and experimental synchrotron x-ray diffraction studies, we construct a model for previously unattributed point defect centers in silicon carbide (SiC) as a near-stacking fault axial divacancy and show how this model explains these defect's robustness against photoionization and room temperature stability. These results provide a materials-based solution to the optical instability of color centers in semiconductors, paving the way for the development of robust single-photon sources and spin qubits.
ISSN:2331-8422
DOI:10.48550/arxiv.1905.11801