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In-situ synthesis of silicide coatings on molybdenum substrates by electrodeposition in chloride-fluoride molten salts

Silicide coatings including MoSi2 and Si-MoSi2 were prepared on molybdenum substrates by electrodeposition in NaCl-KCl-NaF-K2SiF6 molten salt. The experimental was conducted under different cathodic current densities at the temperature of 1073 K. The effect of the current density on the microstructu...

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Bibliographic Details
Published in:International journal of refractory metals & hard materials 2019-08, Vol.82, p.340-348
Main Authors: Wang, Qian, Zhang, Liang, Zhai, Lu Lu, Li, Ji Dong, Zhang, Jun Wei
Format: Article
Language:English
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Summary:Silicide coatings including MoSi2 and Si-MoSi2 were prepared on molybdenum substrates by electrodeposition in NaCl-KCl-NaF-K2SiF6 molten salt. The experimental was conducted under different cathodic current densities at the temperature of 1073 K. The effect of the current density on the microstructure, phase composition, cross-section morphologies and elemental distribution of the as-prepared coatings were investigated by means of SEM, XRD and EDX. The results revealed that the type of the silicide coatings was strongly dependent on the current density and the relevant deposition mechanism was discussed. Besides, the electrochemical behavior of silicon ion in the chloride-fluoride molten salts was also studied using cyclic voltammetry and chronopotentiometry to reveal the electroreduction mechanism. The reduction of Si(IV) to Si was proved to be a quasi-reversible or irreversible diffusion-controlled single-step reaction and the diffusion coefficient of Si(IV) calculated from chronopotentiograms was (1.28 ± 0.25) × 10−5 cm2·s−1. •Compact and adherent silicide coating were deposited on Mo substrates using molten salt electrochemistry method.•The effect of the current density on the as-prepared silicide coatings was discussed in detail.•The electrochemical reduction mechanism of silicon ion in molten salts was studied.
ISSN:0263-4368
2213-3917
DOI:10.1016/j.ijrmhm.2019.05.011