The bandgap of ZnSnN2 with a disordered-wurtzite structure

The metathesis reaction between SnF4, ZnF2, and NaN3 under high pressure enabled the synthesis of ZnSnN2 crystals with a Zn/(Zn + Sn) ratio of 0.50. The crystal structure, optical bandgap, and carrier density of these stoichiometric ZnSnN2 crystals were investigated. X-ray diffraction profiles of th...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2019-06, Vol.58 (SC), p.SC1034
Main Authors: Kawamura, Fumio, Yamada, Naoomi, Cao, Xiang, Imai, Motoharu, Taniguchi, Takashi
Format: Article
Language:English
Subjects:
Carrier density
Crystal structure
Crystals
Electrical properties
Energy gap
Metathesis
Sintering (powder metallurgy)
Sodium azides
Wurtzite
X-ray diffraction
Zinc fluorides
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Summary:The metathesis reaction between SnF4, ZnF2, and NaN3 under high pressure enabled the synthesis of ZnSnN2 crystals with a Zn/(Zn + Sn) ratio of 0.50. The crystal structure, optical bandgap, and carrier density of these stoichiometric ZnSnN2 crystals were investigated. X-ray diffraction profiles of the obtained powders coincided with those of a disordered wurtzite phase, regardless of the synthesis temperature and pressure. The electrical properties of the ZnSnN2 powders with stoichiometric metal compositions were studied after sintering under high pressure and temperature. The disordered wurtzite phase exhibited a bandgap of Eg = 0.7-1.2 eV, in reasonable agreement with theoretical predictions.
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab0ace