Generalized Class-E Power Amplifier With Shunt Capacitance and Shunt Filter

This paper presents a generalized analysis of the Class-E power amplifier (PA) with a shunt capacitance and a shunt filter, leading to a revelation of a unique design flexibility that can be exploited either to extend the maximum operating frequency of the PA or to allow the use of larger active dev...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2019-08, Vol.67 (8), p.3464-3474
Main Authors: Safari Mugisho, Moise, Makarov, Denis G., Rassokhina, Yulia V., Krizhanovski, Vladimir G., Grebennikov, Andrei, Thian, Mury
Format: Article
Language:English
Subjects:
Capacitance
Class E
Electric potential
GaN
harmonic suppression
harmonic tuning
high efficiency
Inductance
Inductors
lumped element
MOSFET
MOSFETs
power amplifier (PA)
Power amplifiers
Product design
Resonant frequencies
series reactance
shunt capacitance
shunt filter
Shunts (electrical)
Switches
Switching
Topology
Transistors
transmission line
Transmission lines
Voltage
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Summary:This paper presents a generalized analysis of the Class-E power amplifier (PA) with a shunt capacitance and a shunt filter, leading to a revelation of a unique design flexibility that can be exploited either to extend the maximum operating frequency of the PA or to allow the use of larger active devices with higher power handling capability. The proposed PA fulfills zero voltage switching (ZVS) and zero voltage derivative switching (ZVDS) conditions, resulting in a theoretical dc-to-RF efficiency of 100%. Explicit design equations for the load-network parameters are derived, and the analytical results are confirmed by harmonic-balance simulations. Two PA prototypes were constructed with one designed at low frequency and the other at high frequency. The first PA, which employs a MOSFET and a lumped-element load-network, delivered a peak drain efficiency (DE) of 93.3% and a peak output power of 37 dBm at 1 MHz. The second PA, which employs a GaN HEMT and a transmission-line (TL) load-network to provide the drain of the transistor with the required load impedances at the fundamental frequency as well as even and odd harmonic frequencies, delivered a peak DE of 90.2% and a peak output power of 39.8 dBm at 1.37 GHz.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2019.2923514