Low temperature and fast growth of one-directionally grown aluminum nitride film by atmospheric pressure halide CVD method

Aluminum Nitride (AlN) shows high thermal conductivity, high electrical resistivity, and chemical stability and expected as a candidate for a substrate of AlxGa1−xN based thin films for LEDs. In the present study, we demonstrate low temperature (800°C) and fast growth (9.2 µm/h) of one-directionally...

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Bibliographic Details
Published in:Journal of the Ceramic Society of Japan 2019/09/01, Vol.127(9), pp.612-616
Main Authors: SAKAMOTO, Naonori, SUZUKI, Takaya, KAWAGUCHI, Takahiko, WAKIYA, Naoki, SUZUKI, Hisao
Format: Article
Language:English
Subjects:
Aluminum
Aluminum nitride
Atmospheric pressure
Chemical vapor deposition
CVD
Electrical resistivity
Low energy cost process
Low temperature
Nucleation
Organic chemistry
Substrates
Thermal conductivity
Thin film
Thin films
Vacuum systems
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Summary:Aluminum Nitride (AlN) shows high thermal conductivity, high electrical resistivity, and chemical stability and expected as a candidate for a substrate of AlxGa1−xN based thin films for LEDs. In the present study, we demonstrate low temperature (800°C) and fast growth (9.2 µm/h) of one-directionally grown AlN film by atmospheric pressure halide CVD method, in which AlN films grow under air pressure without any requirement of vacuum systems. For obtaining uniaxial AlN films, seeding layer prepared at the initial stage of the growth plays an important role. Growth mechanisms and effects of the seeding layer is discussed based upon optical and miscrostructural analyses.
ISSN:1882-0743
1348-6535
DOI:10.2109/jcersj2.19038