Highly Sensitive Detection of Influenza A (H1N1) Virus With Silicon Nanonet BioFETs

• Published in: IEEE sensors journal 2019-12, Vol.19 (23), p.10985-10990
• Main Authors: Park, Chanoh, Choi, Wonyoung, Kim, Donghoon, Jin, Bo, Lee, Jeong-Soo
• Format: Article
• Language: English
• Subjects: BioFET; Biological effects; biosensor; Biosensors; Field effect transistors; H1N1; Influenza; influenza A; Logic gates; Nanobioscience; Nanonet; Room temperature; Semiconductor devices; Sensitivity; Sensors; Silicon; Surface treatment; Swine flu; Threshold voltage; Viruses; Viruses (medical)
• ISSN: 1530-437X; 1558-1748
• DOI: 10.1109/JSEN.2019.2936216

Highly sensitive silicon-nanonet biologically active field-effect transistors (BioFETs) for the detection of influenza A (H1N1) virus have been demonstrated using a top-down process. The BioFETs show excellent intrinsic electrical characteristics, such as a low threshold voltage of 0.7 V and high on/off current ratio of ~10 7 . The sensing characteristics were measured at room temperature with various concentrations of H1N1 virus in a range of 10 pg/ml - 100 ng/ml. The current-related sensitivity ( {S}_{ {I}} ) shows a higher value in the subthreshold regime, where {S}_{ {I}} is strongly correlated with the subthreshold swing ( SS ). The voltage-related sensitivity ( {S}_{ {V}} ) shows almost constant behavior from the subthreshold regime to the linear regime. The limit of detection (LOD) was 10 pg/ml, which is 6 times lower than values previously reported for FET-type sensors. In addition, the nanonet sensors exhibit high specificity to influenza A virus with negligible false positive for influenza B virus.