TCO and light trapping in silicon thin film solar cells

• Published in: Solar energy 2004-01, Vol.77 (6), p.917-930
• Main Authors: Müller, Joachim, Rech, Bernd, Springer, Jiri, Vanecek, Milan
• Format: Article
• Language: English
• Subjects: Absorption losses; Light scattering; Light trapping; Modeling; Photovoltaic cells; Silicon wafers; Solar cells; Solar energy; TCO; Thin films; Thin-film silicon; Zinc oxide (ZnO)
• ISSN: 0038-092X; 1471-1257
• DOI: 10.1016/j.solener.2004.03.015

For thin film silicon solar cells and modules incorporating amorphous (a-Si:H) or microcrystalline (μc-Si:H) silicon as absorber materials, light trapping, i.e. increasing the path length of incoming light, plays a decisive role for device performance. This paper discusses ways to realize efficient light trapping schemes by using textured transparent conductive oxides (TCOs) as light scattering, highly conductive and transparent front contact in silicon p–i–n (superstrate) solar cells. Focus is on the concept of applying aluminum-doped zinc oxide (ZnO:Al) films, which are prepared by magnetron sputtering and subsequently textured by a wet-chemical etching step. The influence of electrical, optical and light scattering properties of the ZnO:Al front contact and the role of the back reflector are studied in experimentally prepared a-Si:H and μc-Si:H solar cells. Furthermore, a model is presented which allows to analyze optical losses in the individual layers of a solar cell structure. The model is applied to develop a roadmap for achieving a stable cell efficiency up to 15% in an amorphous/microcrystalline tandem cell. To realize this, necessary prerequisites are the incorporation of an efficient intermediate reflector between a-Si:H top and μc-Si:H bottom cell, the use of a front TCO with very low absorbance and ideal light scattering properties and a low-loss highly reflective back contact. Finally, the mid-frequency reactive sputtering technique is presented as a promising and potentially cost-effective way to up-scale the ZnO front contact preparation to industrial size substrate areas.