Electrical transport characteristics of chemically robust PDPP-DTT embedded in a bridged silsesquioxane network

Chemical robustness of solution-processed polymer semiconductor films against various chemical solvents plays a critical role in realizing the low-cost fabrication of functional devices in tandem structures. This has been recently obtained by constructing a semi-interpenetrating diphasic polymer net...

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Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2019, Vol.7 (47), p.14889-14896
Main Authors: Shin, Jihye, Park, Han Wool, Kim, Seunghan, Yang, Jeehye, Kim, Jaehee, Park, Hye Won, Kim, Do Hwan, Kang, Moon Sung
Format: Article
Language:English
Subjects:
Bridge construction
Disruption
Organic chemistry
Polymer films
Polymers
Robustness (mathematics)
Temperature dependence
Transport properties
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Summary:Chemical robustness of solution-processed polymer semiconductor films against various chemical solvents plays a critical role in realizing the low-cost fabrication of functional devices in tandem structures. This has been recently obtained by constructing a semi-interpenetrating diphasic polymer network (s-IDPN) comprising a bridged silsesquioxane (BSSQ) framework with an embedded polymer semiconductor. Despite the disruption in the ordering of polymers induced by the BSSQ framework, the electrical transport characteristics of the s-IDPN film turned out to be superior to those of the pristine polymer film. As a case study, we examined the temperature-dependent electrical transport characteristics of poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole- alt -5,5-(2,5-di(thien-2-yl)thieno[3,2- b ]thiophene)] (PDPP-DTT) embedded in a bridged silsesquioxane (BSSQ) framework. The enhanced transport through PDPP-DTT in the s-IDPN structure is associated with the increased short-range ordering of the polymers embedded in the BSSQ framework and the chemical doping effect provided by the framework, which altogether concentrate the density of states for PDPP-DTT effectively involved in hole transport. Chemically robust films of PDPP-DTT imbedded within a bridged silsesquioxane exhibit superior electrical transport characteristics than what are achieved from neat films of PDPP-DTT.
ISSN:2050-7526
2050-7534
DOI:10.1039/c9tc04940a