Automatic Transformation of Membrane‐Type Electronic Devices into Complex 3D Structures via Extrusion Shear Printing and Thermal Relaxation of Acrylonitrile–Butadiene–Styrene Frameworks

• Published in: Advanced functional materials 2020-01, Vol.30 (5), p.n/a
• Main Authors: Jang, Hun Soo, Yoo, Seonggwang, Kang, Seong Hyeon, Park, Jongjun, Kim, Gi‐Gwan, Ko, Heung Cho
• Format: Article
• Language: English
• Subjects: 3D electronics; ABS resins; automatic transformation; Butadiene; Chains (polymeric); Electronic devices; Extrusion; extrusion shear printing; Gallium; Glass transition temperature; Indium gallium zinc oxide; Materials science; Membranes; membrane‐type electronics; Modulus of elasticity; Stress concentration; Stress relaxation; Styrenes; thermal plasticization; Thermal relaxation; Transformations; Transistors; Zinc oxide
• ISSN: 1616-301X; 1616-3028
• DOI: 10.1002/adfm.201907384

This work demonstrates a means of automatic transformation from planar electronic devices to desirable 3D forms. The method uses a spatially designed thermoplastic framework created via extrusion shear printing of acrylonitrile–butadiene–styrene (ABS) on a stress‐free ABS film, which can be laminated to a membrane‐type electronic device layer. Thermal annealing above the glass transition temperature allows stress relaxation in the printed polymer chains, resulting in an overall shape transformation of the framework. In addition, the significant reduction in the Young's modulus and the ability of the polymer chains to reflow in the rubbery state release the stress concentration in the electronic device layer, which can be positioned outside the neutral mechanical plane. Electrical analyses and mechanical simulations of a membrane‐type Au electrode and indium gallium zinc oxide transistor arrays before and after transformation confirm the versatility of this method for developing 3D electronic devices based on planar forms. Automatic transformation technology enables shape changes in electronic devices from planar to desirable 3D forms. This method uses extrusion shear printing to generate stressed acrylonitrile–butadiene–styrene (ABS) lines on a stress‐free ABS film and utilizes thermal relaxation of the supportive framework to allow 3D transformation while preserving the mechanical stability of the electronic devices, including indium gallium zinc oxide transistor arrays.