3D Diamond Tracking Detectors: numerical analysis for Timing applications with TCAD tools

In view of the HL-LHC upgrade the use of Chemical Vapor Deposited (CVD) diamond has been proposed as an efficient alternative to conventional silicon-based devices. Diamond detectors are more robust to radiation damage, since the high carriers' mobility allows faster signal collection when comp...

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Bibliographic Details
Published in:Journal of instrumentation 2020-01, Vol.15 (1), p.C01048-C01048
Main Authors: Morozzi, A., Sciortino, S., Anderlini, L., Servoli, L., Kanxheri, K., Lagomarsino, S., Passeri, D.
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Circuits
Collection
Columns (structural)
Computer simulation
Detectors
Diamond tools
Electric contacts
Electric fields
Laser beams
Leakage current
Numerical analysis
Organic chemistry
Radiation damage
Radiation tolerance
Robustness (mathematics)
Sensors
Silicon
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Summary:In view of the HL-LHC upgrade the use of Chemical Vapor Deposited (CVD) diamond has been proposed as an efficient alternative to conventional silicon-based devices. Diamond detectors are more robust to radiation damage, since the high carriers' mobility allows faster signal collection when compared to silicon, while retaining extremely low leakage currents. These properties could be of particular interest in particle detection applications where stringent timing and radiation tolerance requirements need to be fulfilled. A suitable implementation of such a class of detector is that of 3D pixelated CVD diamond with graphitic parallel columns/trenches contact scheme, fabricated through a focused laser beam technology. TCAD simulations can be exploited to assess the effect of different electrode configurations and/or biasing scheme on the electric field profiles, aiming at minimizing the effects of inefficient field regions in terms of charge collection. For timing application purposes, the transport effects along the graphitic columns can be accounted for, aiming at evaluating the performance and limitations of such a class of detectors. The equivalent “load” effect of graphitic columns of different size/resistivity can be taken into account by means of device/circuit-level simulations including measured resistances and capacitances.
ISSN:1748-0221
1748-0221
DOI:10.1088/1748-0221/15/01/C01048