On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR

We have demonstrated an on-wafer fabrication process for AlGaN-based UV-C laser diodes (LDs) with etched mirrors and have achieved lasing for 100 ns pulsed current injection at room temperature. A combined process of dry and wet etching was employed to achieve smooth and vertical AlGaN (1 1 ¯00) fac...

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Bibliographic Details
Published in:Applied physics letters 2020-03, Vol.116 (12)
Main Authors: Sakai, Tadayoshi, Kushimoto, Maki, Zhang, Ziyi, Sugiyama, Naoharu, Schowalter, Leo J., Honda, Yoshio, Sasaoka, Chiaki, Amano, Hiroshi
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Applied physics
Atomic layer epitaxy
Current injection
Lasers
Lasing
Optoelectronics
Production methods
Pulsed current
Room temperature
Semiconductor lasers
Substrates
Threshold currents
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Summary:We have demonstrated an on-wafer fabrication process for AlGaN-based UV-C laser diodes (LDs) with etched mirrors and have achieved lasing for 100 ns pulsed current injection at room temperature. A combined process of dry and wet etching was employed to achieve smooth and vertical AlGaN (1 1 ¯00) facets. These etched facets were then uniformly coated with a distributed Bragg reflector by atomic layer deposition. A remarkable reduction of the lasing threshold current density to 19.6   kA / cm 2 was obtained owing to the high reflectivity of the etched and coated mirror facets. The entire laser diode fabrication process was carried out on a whole 2-in. wafer. We propose this mirror fabrication process as a viable low-cost AlGaN-based UV-C LD production method that is also compatible with highly integrated optoelectronics based on AlN substrates.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5145017