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Development of a Field Emission Image Sensor Tolerant to Gamma-Ray Irradiation
A field emission image sensor (FEIS) that consists of a field emitter array (FEA) and a cadmium telluride-based diode was proposed for use in the nuclear decommissioning of the Fukushima Daiichi nuclear power plant. FEAs and cadmium telluride/cadmium sulfide diode were irradiated with γ-rays for a d...
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Published in: | IEEE transactions on electron devices 2020-04, Vol.67 (4), p.1660-1665 |
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Main Authors: | , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A field emission image sensor (FEIS) that consists of a field emitter array (FEA) and a cadmium telluride-based diode was proposed for use in the nuclear decommissioning of the Fukushima Daiichi nuclear power plant. FEAs and cadmium telluride/cadmium sulfide diode were irradiated with γ-rays for a dozen times, each with a dose of irradiation of 100 kGy, until the accumulated dose of irradiation reached 1 MGy. Electron emission properties of the FEAs and the photovoltaic properties of the cadmium telluride/cadmium sulfide diode were evaluated after each irradiation. Neither the FEAs nor the cadmium telluride/cadmium sulfide diode showed significant deterioration in their current-voltage characteristics. A test tube of FEIS consisting of an FEA and cadmium telluride-cadmium sulfide diode showed a photo-detection performance both before and after the γ-ray irradiation to the dose of irradiation of 1 MGy. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2020.2977674 |