The effect of silicon doping on the geometrical structures, stability, and electronic and spectral properties of magnesium clusters: DFT study of SiMgn (n = 1‐12) clusters

• Published in: International journal of quantum chemistry 2020-05, Vol.120 (10), p.n/a
• Main Authors: Zhu, Ben‐Chao, Zhang, Shuai, Zeng, Lu
• Format: Article
• Language: English
• Subjects: Calypso; Charge distribution; Chemistry; Cluster analysis; Density functional theory; DFT; Dimensional stability; Doping; Electron affinity; electronic and spectral properties; Electronic properties; geometrical structures; Hardness; Ionization potentials; Isomers; Magnesium; Mathematical analysis; Optimization; Physical chemistry; Quantum physics; Silicon; SiMg n clusters; Spectra; stability; Stability analysis; Structural stability
• ISSN: 0020-7608; 1097-461X
• DOI: 10.1002/qua.26143

Using the density functional theory (DFT) method at the B3LYP /6−311G (D) level, we studied how silicon doping affects the geometrical structure, stability, and electronic and spectral properties of magnesium clusters. The stable isomers of SiMg n (n = 1‐12) clusters were calculated by searching numerous initial configurations using the CALYPSO program. The geometrical structure optimization shows that most stable SiMg n (n = 3‐12) clusters are three‐dimensional. In addition, geometrical structure growth patterns show that some structures of SiMg n clusters can be directly formed by replacing one Mg atom in the corresponding Mg n + 1 cluster with one silicon atom, such as SiMg8 and Mg9 clusters. The stability of SiMg n clusters is analyzed by calculating the average binding energy, fragmentation energy, and second‐order energy difference. The results show that SiMg n clusters with n = 5 and 8 are more stable than others. MO contents analysis show that the Si 3p‐orbitals and Mg 3s‐orbital are mainly responsible for the stability of these two clusters. The results of the natural charge population (NCP) and natural electronic configure (NEC) analysis of the electronic properties reveal that the charges in SiMgn (n = 1‐12) clusters transfer from magnesium atoms to silicon frame, and electronic charge distributions are primarily governed by s‐ and p‐orbital interactions. In addition, the Vertical ionization potential (VIP), vertical electron affinity (VEA), and chemical hardness of ground sates of SiMg n (n = 1‐12) clusters were studied in detail and compared with the experimental results. The conclusions show that the chemical hardness of most SiMg n clusters are lower than that of pure Mg n + 1 (n = 1‐12) clusters, except for n = 1 and 8. This indicates that the doping of silicon atom can always reduce the chemical hardness of pure magnesium clusters. Finally, the infrared and Raman spectral properties of SiMg5 and SiMg8 clusters were calculated and discussed in detail. When silicon atom is used as a dopant of magnesium clusters, the growth pattern of the resulting clusters displays interesting behaviors. Surprisingly, the structures of SiMg8 and Mg9 clusters are almost identical. Some structures of SiMg n clusters can be directly formed by replacing one Mg atom in the corresponding Mg n + 1 cluster with one silicon atom.