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Atomistics of pre-nucleation layering of liquid metals at the interface with poor nucleants
Liquid layering at heterogeneous solid/liquid interfaces is a general phenomenon, which provides structural templates for nucleation of crystalline phases on potent nucleants. However, its efficacy near poor nucleants is incompletely understood. Here we use a combination of X-ray crystal truncation...
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Published in: | Communications chemistry 2019-01, Vol.2 (1), Article 1 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Liquid layering at heterogeneous solid/liquid interfaces is a general phenomenon, which provides structural templates for nucleation of crystalline phases on potent nucleants. However, its efficacy near poor nucleants is incompletely understood. Here we use a combination of X-ray crystal truncation rod analysis and ab initio molecular dynamics to probe the pre-nucleation liquid layering at the sapphire–aluminium solid/liquid interface. At the sapphire side, a ~1.6 aluminium-terminated structure develops, and at the liquid side, two pre-nucleation layers emerge at 950 K. No more pre-nucleation layer forms with decreasing temperature indicating that nucleation of crystalline aluminium through layer-by-layer atomic adsorption of liquid atoms is not favoured. Instead, the appearance of stochastically-formed nuclei near the substrate is supported by our experiments. Nucleation on poor nucleants is dominated by the stochastic nucleation events which are substantially influenced by the pre-nucleation layers that determine the surface structure in contact with the nuclei.
Liquid layering at heterogeneous surfaces is a general phenomenon but is poorly understood. Here the authors probe pre-nucleation liquid layering at the sapphire–Al solid/liquid interface using a combination of in situ X-ray crystal truncation rod analysis and ab-initio molecular dynamics simulations. |
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ISSN: | 2399-3669 2399-3669 |
DOI: | 10.1038/s42004-018-0104-1 |