Electromagnetically induced grating with second field quantization in spherical semiconductor quantum dots

A new approach for diffracting the weak probe beam into higher-order directions is proposed via electromagnetically induced grating in second field quantization formalism, offering a new way for implementations of quantum information with semiconductor quantum dots. The formalism of second field qua...

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Bibliographic Details
Published in:Optical and quantum electronics 2020-05, Vol.52 (5), Article 252
Main Author: Naseri, Tayebeh
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Computer Communication Networks
Computer simulation
Diffraction efficiency
Electrical Engineering
Electronic devices
Electrons
Formalism
Gratings (spectra)
Lasers
Luminous intensity
Measurement
Optical communication
Optical Devices
Optics
Phase modulation
Photonics
Photons
Physics
Physics and Astronomy
Quantum dots
Quantum phenomena
Transmissivity
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Summary:A new approach for diffracting the weak probe beam into higher-order directions is proposed via electromagnetically induced grating in second field quantization formalism, offering a new way for implementations of quantum information with semiconductor quantum dots. The formalism of second field quantization allows describing atoms and photons as a many-body system. An induced diffraction grating is formed based on the electromagnetic induced transparency when a standing-wave coupling field is applied to a spherical quantum dot as a three-level system. Due to phase modulation, the zeroth-order light intensity becomes weak, and the first-order diffraction is improved affectedly. On the contrary, the probe beam is barely diffracted via absorption modulation. The simulation results verify that photon numbers of probe and control fields, as well as other parameters in the QD, can lead to the diffraction efficiency of phase grating to be improved. Phase diffraction grating accompanied with a high transmissivity is demonstrated, and the first-order diffraction efficiency reaches 30 % . Also, the impact of QD dimensions on its optical response is investigated. This model may find potential applications in designing the semiconductor quantum dot-based photonic devices in optical communications and quantum information networks.
ISSN:0306-8919
1572-817X
DOI:10.1007/s11082-020-02358-w