The role of process temperature on structural, optical, vibrational and electronic environments of thermal chemical vapor-deposited copper-doped zinc oxide nanostructured thin films

Copper incorporated zinc oxide (Cu–ZnO) nanostructure thin films were deposited by using a high-temperature chemical vapor deposition technique at 650–800 °C with Cu and Zn powder in O 2 and N 2 gas atmosphere. The Cu–ZnO thin films were characterized by AFM, XRD, FTIR, Raman spectroscopy, UV–Vis sp...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2020-08, Vol.126 (8), Article 642
Main Author: Swain, Bibhu P.
Format: Article
Language:English
Subjects:
Applied physics
Characterization and Evaluation of Materials
Chemical vapor deposition
Condensed Matter Physics
Copper
High temperature
Machines
Manufacturing
Materials science
Nanoparticles
Nanotechnology
Optical and Electronic Materials
Photoluminescence
Physics
Physics and Astronomy
Processes
Raman spectroscopy
Spectrum analysis
Surfaces and Interfaces
Thin Films
Ultraviolet emission
X ray photoelectron spectroscopy
Zinc oxide
Zinc oxides
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Summary:Copper incorporated zinc oxide (Cu–ZnO) nanostructure thin films were deposited by using a high-temperature chemical vapor deposition technique at 650–800 °C with Cu and Zn powder in O 2 and N 2 gas atmosphere. The Cu–ZnO thin films were characterized by AFM, XRD, FTIR, Raman spectroscopy, UV–Vis spectroscopy, and XPS to investigate the structural, vibrational, optical, and electronic environments of Cu–ZnO thin films. The AFM study revealed that nanoparticles of Cu–ZnO films are varied from 225 to 74 nm with increasing process temperature from 650 to 800 °C. The relative intensity of E2(high) phonon increases with increase in the process temperature 650–800 °C. The photoluminescence spectra of Cu-doped ZnO films showed a strong orange emission peak centered at 635.12 nm and 700.06 nm due to bound excitation and intrinsic defects, respectively. The Tauc optical bandgap of Cu–ZnO thin films decreased from 2.72 to 2.22 eV, due to the increase with an increase in copper doping concentration. Moreover, the semiempirical electronic environments of Zn 2p3/2, O(1 s), and Cu (2p) core orbital are analyzed by the Origin software.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-020-03824-8