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Direct observation of continuous networks of 'sol-gel' processed metal oxide thin film for organic and perovskite photovoltaic modules with long-term stability

'Sol-gel'-processed transition metal oxide (TMO) thin films sandwiched by an organic photoactive layer and metal electrodes have proven to be a versatile interlayer for photovoltaics with long-term stability on the laboratory scale; however, chemical defects and dewetting (or shrinkage) pr...

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Bibliographic Details
Published in:Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2020-09, Vol.8 (36), p.18659-18667
Main Authors: Hong, Soonil, Kim, Geunjin, Park, Byoungwook, Kim, Ju-Hyeon, Kim, Junghwan, Pak, Yusin, Kim, Jehan, Kwon, Sooncheol, Lee, Kwanghee
Format: Article
Language:English
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Summary:'Sol-gel'-processed transition metal oxide (TMO) thin films sandwiched by an organic photoactive layer and metal electrodes have proven to be a versatile interlayer for photovoltaics with long-term stability on the laboratory scale; however, chemical defects and dewetting (or shrinkage) processes during sol-gel synthesis on top of the photoactive layer often cause performance variations, impeding the development of large-area photovoltaic modules. Here, we demonstrate that a low surface energy difference at the organic interface allows long-range diffusion of metal ion precursors to promote continuous chemical synthesis associated with oxo-bridge formation. Using high-resolution Auger electron spectroscopy, we confirm that the resultant TMO thin film on top of the suitable surface has a defect-free and continuous metal-oxygen network (MON) with a high oxygen/metal ratio. Our findings can be applied to obtain organic/perovskite photovoltaic modules having long-term stability, approaching an efficiency of 4.2%/14.5% and maintaining over 80% of their initial efficiency for up to 1500 hours/2000 hours with an area of 10.8 cm 2 /9.06 cm 2 . Continuous metal oxygen networks of TiO x are formed on top of organic semiconductors with favorable surface energy, which prolong T80-lifetime for organic and perovskite modules up to more than 2000 hours.
ISSN:2050-7488
2050-7496
DOI:10.1039/d0ta02813d