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Defect engineering of ZnO for electron transfer in O3 catalytic decomposition
[Display omitted] •ZnO with multiple types of defects are synthesized by annealing and doping.•ZnO doping with Ga and Li and annealed in H2 behaves high ozone removal performance.•There exists electron transfer between defects, O3 and intermediate oxygen specie.•The deactivation of catalyst is accom...
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Published in: | Applied catalysis. B, Environmental Environmental, 2020-11, Vol.277, p.119223, Article 119223 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | [Display omitted]
•ZnO with multiple types of defects are synthesized by annealing and doping.•ZnO doping with Ga and Li and annealed in H2 behaves high ozone removal performance.•There exists electron transfer between defects, O3 and intermediate oxygen specie.•The deactivation of catalyst is accompanied by the filling out of the oxygen vacancy.
Nowadays, it is necessary to discover the interactions of O3 with metal oxides in order to synthesize active O3 degradation catalysts. Herein, ZnO is adopted as a model and the crystal defects are tuned by annealing in H2 and O2, and by doping with Ga and Li. The H2 annealed ZnO behaves far higher activity towards 20 ppm O3 than those as-obtained and O2 annealed ones, and the activity can be further improved by doping with Ga donors and Li acceptors. The mechanism investigation shows that the oxygen vacancy induced by H2 annealing favors the activity while the oxygen interstitials depress it, implying that there existed electron transfer between crystal defects, O3 and the intermediate species. Furthermore, the deactivation of catalyst is attributed to the filling out of the oxygen vacancy. All these results provide fundamental understanding for further improvement of O3 degradation catalysts. |
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ISSN: | 0926-3373 1873-3883 |
DOI: | 10.1016/j.apcatb.2020.119223 |