Design and Characterization of MoO3/Mg/MoO3 Interfaces

In this article, the physical design and performance of stacked layers of MoO 3 /Mg/MoO 3 (MMM) is investigated by means of X-ray diffraction and biasing-dependent impedance spectroscopy techniques. The amorphous MMM films which are coated onto Au thin-film substrates in a vacuum media of 10 −5 mbar...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2020-10, Vol.67 (10), p.4354-4359
Main Authors: Khusayfan, Najla M., Khanfar, Hazem K.
Format: Article
Language:English
Subjects:
Band filters
Bandpass
Capacitance
Electric potential
Gold
Gold coatings
Impedance
Metal oxide semiconductors
Molybdenum oxides
Molybdenum trioxide
molybdenum trioxide (MoO₃)
MOS devices
negative capacitance (NC)
nMOS
Noise reduction
Oscillators
Parasitics (electronics)
Reflectance
Spectroscopy
Spectrum analysis
Substrates
Thin films
Voltage
X-ray
X-ray scattering
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Summary:In this article, the physical design and performance of stacked layers of MoO 3 /Mg/MoO 3 (MMM) is investigated by means of X-ray diffraction and biasing-dependent impedance spectroscopy techniques. The amorphous MMM films which are coated onto Au thin-film substrates in a vacuum media of 10 −5 mbar are observed to exhibit metal oxide semiconductor (MOS) characteristics. The pMOS and nMOS inversion channels are initiated at biasing voltages of −2.0 and +2.0 V, respectively. In addition, the biasing-dependent spectral analysis of the device has shown that the negativity of the capacitance could be linearly increased or decreased based on the MOS mode and applied voltage value. The engineering of the negative capacitance effect in the device makes it preferable to use as voltage controlled linear oscillators which can be employed for noise reducing and parasitic capacitance cancellation. In addition, the analyses of biasing-dependent reflection coefficient spectra in the frequency domain of 0.01-1.80 GHz have shown that the MMM device exhibits features of bandpass/stop features below and above 1.40 GHz, respectively. The degree of wave transmission can be attenuated by the biasing voltage in the respective channel.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2020.3015470