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Strong spin-orbit interactions in a correlated two-dimensional electron system formed in SrTi O3 (001) films grown epitaxially on p− Si(001)
We observe strong spin-orbit interactions in a two-dimensional electron system formed on SrTi O3 (001) films grown epitaxially on p-Si(001). High-resolution transmission electron microscopy and related analytical techniques reveal a sharp interface between Si and SrTi O3. Strain mapping analysis sho...
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Published in: | Physical review. B 2020-09, Vol.102 (12), p.1 |
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container_title | Physical review. B |
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creator | Cottier, Ryan J Koehne, Barry D Miracle, John T Currie, Daniel A Theodoropoulou, Nikoleta Pantelidis, Leonidas Hernandez-Robles, Andrei Ponce, Arturo |
description | We observe strong spin-orbit interactions in a two-dimensional electron system formed on SrTi O3 (001) films grown epitaxially on p-Si(001). High-resolution transmission electron microscopy and related analytical techniques reveal a sharp interface between Si and SrTi O3. Strain mapping analysis shows in-plane strain in SrTi O3 very close to the interface. Analysis of the low temperature magnetoconductance measurements reveals that both quantum interference and electron-electron interactions are important. The contributions of these two quantum phenomena to the temperature and magnetic field dependence of the conductance and Hall effect are separated. The electron system has carrier concentrations larger than 1014 cm−2, appears to be confined within ∼4 nm, and has an estimated spin-splitting energy ∼12 meV. |
doi_str_mv | 10.1103/PhysRevB.102.125423 |
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High-resolution transmission electron microscopy and related analytical techniques reveal a sharp interface between Si and SrTi O3. Strain mapping analysis shows in-plane strain in SrTi O3 very close to the interface. Analysis of the low temperature magnetoconductance measurements reveals that both quantum interference and electron-electron interactions are important. The contributions of these two quantum phenomena to the temperature and magnetic field dependence of the conductance and Hall effect are separated. 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High-resolution transmission electron microscopy and related analytical techniques reveal a sharp interface between Si and SrTi O3. Strain mapping analysis shows in-plane strain in SrTi O3 very close to the interface. Analysis of the low temperature magnetoconductance measurements reveals that both quantum interference and electron-electron interactions are important. The contributions of these two quantum phenomena to the temperature and magnetic field dependence of the conductance and Hall effect are separated. The electron system has carrier concentrations larger than 1014 cm−2, appears to be confined within ∼4 nm, and has an estimated spin-splitting energy ∼12 meV.</abstract><cop>College Park</cop><pub>American Physical Society</pub><doi>10.1103/PhysRevB.102.125423</doi></addata></record> |
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subjects | Carrier density Electron spin Electrons Epitaxial growth Hall effect Low temperature Plane strain Quantum phenomena Resistance Spin-orbit interactions Strain analysis Temperature dependence |
title | Strong spin-orbit interactions in a correlated two-dimensional electron system formed in SrTi O3 (001) films grown epitaxially on p− Si(001) |
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