TCAD Framework for HCD Kinetics in Low VD Devices Spanning Full VG/VD Space

The time kinetics of hot carrier degradation (HCD) is modeled using a reaction diffusion drift (RDD) framework. It is incorporated into Sentaurus Device TCAD and validated using conduction mode HCD data in n- and p-channel MOSFETs and FinFETs. RDD-enabled TCAD calculates carrier-energy-initiated gen...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2020-11, Vol.67 (11), p.4749-4756
Main Authors: Sharma, Uma, Duan, Meng, Diwakar, Himanshu, Thakor, Karansingh, Wong, Hiu Yung, Motzny, Steve, Dolgos, Denis, Mahapatra, Souvik
Format: Article
Language:English
Subjects:
Drift
Hot carriers
interface trap generation
Kinetic theory
Kinetics
Logic gates
MOSFETs
Negative bias temperature instability
parametric drift
reaction diffusion drift (RDD) model
self-heating (SH) effect
Solid modeling
Stress
technology CAD (TCAD)
Thermal variables control
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!