Thermal Analysis, Dielectric Response and Electrical Conductivity of Silicon Phthalocyanine Dichloride (SiPcCl2) Thin Films

• Published in: Journal of electronic materials 2021-02, Vol.50 (2), p.562-570
• Main Authors: Salam, Mohamed Abd-el, El-Mallah, H. M., El-Damhogi, D. G., Elesh, E.
• Format: Article
• Language: English
• Subjects: Alternating current; Characterization and Evaluation of Materials; Chemistry and Materials Science; Dichlorides; Dielectric loss; Dielectric polarization; Dielectric relaxation; Differential thermal analysis; Electrical resistivity; Electronics and Microelectronics; Energy value; Instrumentation; Materials Science; Optical and Electronic Materials; Original Research Article; Silicon; Solid State Physics; Temperature dependence; Temperature effects; Thermal stability; Thin films
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-020-08604-x

This research is a detailed examination of the effect of post-annealing on the structure and electrical conductivity of silicon phthalocyanine dichloride (SiPcCl 2 ) thin films. Differential thermal analysis (DTA) is used to determine the temperature limit of thermal stability for a sample of silicon phthalocyanine dichloride (SiPcCl 2 ). The results of differential thermal analysis (DTA) proved that silicon phthalocyanine dichloride (SiPcCl 2 ) is thermally stable up to 415 K. The dielectric behavior and the electrical conductivity of silicon phthalocyanine dichloride (SiPcCl 2 ) thin films were investigated under a temperature effect from 303 K to 383 K and a frequency from 200 Hz to 20 MHz. The frequency and temperature dependence of dielectric loss and dielectric constant values were explained in terms of dielectric polarization theory. The alternative current (AC) conductivity response toward the frequency change obeys Jonscher’s power law. The correlated barrier hopping (CBH) model is utilized and adapted to fit the conduction mechanism in the high- and low-frequency regions. Both the complex electric modulus and the impedance formalisms are used to illustrate the dielectric characteristics of the silicon phthalocyanine dichloride (SiPcCl 2 ). The potential height value of the hopping barrier, W m , and activation energy value, E ac , for dielectric relaxation were determined.