4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics

Optical quantum information processing will require highly efficient photonic circuits to connect quantum nodes on-chip and across long distances. This entails the efficient integration of optically addressable qubits into photonic circuits, as well as quantum frequency conversion to the telecommuni...

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Bibliographic Details
Published in:Nature photonics 2020-05, Vol.14 (5), p.330-334
Main Authors: Lukin, Daniil M., Dory, Constantin, Guidry, Melissa A., Yang, Ki Youl, Mishra, Sattwik Deb, Trivedi, Rahul, Radulaski, Marina, Sun, Shuo, Vercruysse, Dries, Ahn, Geun Ho, Vučković, Jelena
Format: Article
Language:English
Subjects:
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Applied and Technical Physics
Bonding strength
Circuits
CMOS
Color
Color centers
Conversion
Data processing
Emissions
Fabrication
Information processing
Nanofabrication
Nonlinear systems
Nonlinearity
Optical frequency
Photon emission
Photonics
Physics
Physics and Astronomy
Quantum phenomena
Quantum Physics
Qubits (quantum computing)
Silicon
Silicon carbide
Thin films
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Summary:Optical quantum information processing will require highly efficient photonic circuits to connect quantum nodes on-chip and across long distances. This entails the efficient integration of optically addressable qubits into photonic circuits, as well as quantum frequency conversion to the telecommunications band. 4H-silicon carbide (4H-SiC) offers unique potential for on-chip quantum photonics, as it hosts a variety of promising colour centres and has a strong second-order optical nonlinearity. Here, we demonstrate within a single, monolithic platform the strong enhancement of emission from a colour centre and efficient optical frequency conversion. We develop a fabrication process for thin films of 4H-SiC, which are compatible with industry-standard, CMOS nanofabrication. This work provides a viable route towards industry-compatible, scalable colour-centre-based quantum technologies, including the monolithic generation and frequency conversion of quantum light on-chip. Monolithic photonics devices based on SiC are fabricated by a wafer bonding and thinning technique. The strong enhancement of single-photon emission from a colour centre and optical frequency conversion with an efficiency of 360% W −1 are demonstrated.
ISSN:1749-4885
1749-4893
DOI:10.1038/s41566-019-0556-6