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High‐reliability gate driver circuit to prevent ripple voltage

In this paper, a high‐reliability gate driver circuit is proposed to prevent multiple outputs. The proposed circuit ensures reliability of the pull‐up thin‐film transistor (TFT) by periodically discharging the Q node voltage to the low‐level voltage (VGL) in the off stage. In addition, the output no...

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Published in:Journal of the Society for Information Display 2021-01, Vol.29 (1), p.68-77
Main Authors: Lee, Jungwoo, Oh, Jongsu, Jung, Eun Kyo, Park, KeeChan, Jeon, Jae‐Hong, Lee, Soo‐Yeon, Kim, Yong‐Sang
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cited_by cdi_FETCH-LOGICAL-c2939-4a65e64f6d6d57ba627e4c2a3f9ac0ef6a9ff05bb26d14e86827cf6e5cfcf7b13
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container_title Journal of the Society for Information Display
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creator Lee, Jungwoo
Oh, Jongsu
Jung, Eun Kyo
Park, KeeChan
Jeon, Jae‐Hong
Lee, Soo‐Yeon
Kim, Yong‐Sang
description In this paper, a high‐reliability gate driver circuit is proposed to prevent multiple outputs. The proposed circuit ensures reliability of the pull‐up thin‐film transistor (TFT) by periodically discharging the Q node voltage to the low‐level voltage (VGL) in the off stage. In addition, the output node is composed of two pull‐down TFTs that are driven alternately to ensure stability against bias stress. Thus, because the reliabilities of the pull‐up and pull‐down TFTs can be guaranteed simultaneously, the stability of the entire circuit is improved. Based on the simulation results, the rising and falling times of the output pulse are stable within 1.77 and 1.28 μs, respectively, even when the threshold voltage of the entire TFT is shifted by +10.0 V. In addition, the ripple voltage of the proposed circuit is almost eliminated and is within 0.79% of the total swing voltage. Moreover, through current is prevented in the proposed circuit because the turn‐on durations of the pull‐up and pull‐down units are completely nonoverlapping, which suggests that unnecessary power consumption can be eliminated. Therefore, based on 2,160 stages, the total power consumption of the proposed circuit is reduced by 34.7 mW from 276.3 to 241.6 mW. We propose a new gate driver circuit that can prevent output ripple voltage through stably driving of pull‐down TFTs. In the ripple voltage generation period, the pull‐down TFT operates in the saturation region of the I–V curve without any current path. Also, the output node is composed of two pull‐down TFTs are driven alternately to ensure stability against bias stress.
doi_str_mv 10.1002/jsid.969
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The proposed circuit ensures reliability of the pull‐up thin‐film transistor (TFT) by periodically discharging the Q node voltage to the low‐level voltage (VGL) in the off stage. In addition, the output node is composed of two pull‐down TFTs that are driven alternately to ensure stability against bias stress. Thus, because the reliabilities of the pull‐up and pull‐down TFTs can be guaranteed simultaneously, the stability of the entire circuit is improved. Based on the simulation results, the rising and falling times of the output pulse are stable within 1.77 and 1.28 μs, respectively, even when the threshold voltage of the entire TFT is shifted by +10.0 V. In addition, the ripple voltage of the proposed circuit is almost eliminated and is within 0.79% of the total swing voltage. 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subjects a‐IGZO TFT
Circuit reliability
Circuits
Driver circuits
duty ratio
gate driver circuit
Gates (circuits)
Power consumption
reliability
ripple voltage
Ripples
Stability
Threshold voltage
Transistors
title High‐reliability gate driver circuit to prevent ripple voltage
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