Optimization of (In)GaN Heterostructures for Sensing Applications

Herein, the optimization of (In)GaN heterostructures for chemical sensing is presented. The metalorganic vapor phase epitaxy (MOVPE)‐grown sensor consists of an InxGa1−xN quantum well (QW) placed close to the surface of a GaN substrate with a thin GaN cap layer on top. The photoluminescence (PL) wav...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2021-02, Vol.218 (4), p.n/a
Main Authors: Schneidereit, Martin F., Elnahal, Ahmed R., Iskander, Paulette, Cankaya, Murat, Rettig, Oliver, Scholz, Ferdinand
Format: Article
Language:English
Subjects:
Buffer layers
chemical sensors
Doping
Epitaxial growth
Gallium nitrides
Heterostructures
InGaN
Metalorganic chemical vapor deposition
Optical communication
Optimization
Parameter sensitivity
Photoluminescence
Quantum wells
Sensors
simulation versus experiment
Substrates
Thickness
Vapor phase epitaxy
Vapor phases
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Summary:Herein, the optimization of (In)GaN heterostructures for chemical sensing is presented. The metalorganic vapor phase epitaxy (MOVPE)‐grown sensor consists of an InxGa1−xN quantum well (QW) placed close to the surface of a GaN substrate with a thin GaN cap layer on top. The photoluminescence (PL) wavelength of this QW is sensitive to surface potential changes and thus its optical signal is used as sensor response. Simulations are performed with nextnano to improve its sensitivity. Sensor parameters such as the cap layer thickness d, QW thickness Lz, background buffer layer doping concentration N, and indium concentration x of the QW are varied. It is found that a thin cap layer, together with high background doping and medium QW thickness, is ideal. The indium content does not show a strong influence on sensitivity. The trends found in the simulations are mostly confirmed in real‐world experiments performed in a chemical sensing setup, yet quantitative deviations exist. (In)GaN heterostructures offer many unique applications in science and industry. Herein, the optimization of an InGaN quantum well (QW) for optochemical sensing is performed. Simulations predict improved sensitivity for a medium‐sized QW thickness, a thin cap layer above the QW, and a high semiconductor doping concentration. Experiments with selected epitaxially grown samples mostly support these predictions.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.202000517