Charge transfer balancing of planar perovskite solar cell based on a low cost and facile solution-processed CuOx as an efficient hole transporting layer

Planar perovskite solar cells are known for their ease of fabrication and considerable efficiency. Hole transport layer in these cells is however mostly either expensive organic spiro-OMeTAD or hydrophilic PEDOT: PSS polymer which reduces cell lifespan due to its acidic nature. Copper oxide, on the...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2021, Vol.32 (2), p.2312-2325
Main Authors: Makenali, Marzieh, Kazeminezhad, Iraj, Ahmadi, Vahid, Roghabadi, Farzaneh Arabpour
Format: Article
Language:English
Subjects:
Acidic oxides
Characterization and Evaluation of Materials
Charge transport
Chemistry and Materials Science
Copper oxides
Electrochemical impedance spectroscopy
Film thickness
Glove boxes
Materials Science
Optical and Electronic Materials
Perovskites
Photovoltaic cells
Solar cells
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Summary:Planar perovskite solar cells are known for their ease of fabrication and considerable efficiency. Hole transport layer in these cells is however mostly either expensive organic spiro-OMeTAD or hydrophilic PEDOT: PSS polymer which reduces cell lifespan due to its acidic nature. Copper oxide, on the other hand, is a non-toxic inorganic alternative. It can be synthesized through a facile solution-based process, requiring no vacuum system or N 2 glovebox, which makes it conveniently adaptable to large-scale production. Inverted planar perovskite solar cells with CuO x as hole transport layer were studied. To balance the charge transfer in the device and avoid the charge accumulation in the bulk and interfaces, CuO x layer was deposited with different thicknesses. As verified by PL tests, quenching of the deposited CuO x layer was comparable to PEDOT: PSS layer which signifies its effectiveness as a hole transport layer. Optimum observed results were for a cell with an efficiency of 6.26%, V oc of 0.71 V, J sc of 12.87 mA/cm 2 , and fill factor of 0.69. Consistent with J–V measurements, electrochemical impedance spectroscopy indicated a significant increase in charge transport resistance between hole transport layer and perovskite film as the CuO x film thickness was increased from 55 nm to 75 nm.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-020-04996-y