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Direct synthesis of two-dimensional MoS2 on p-type Si and application to solar hydrogen production
Transition metal dichalcogenides (TMDs) are promising two-dimensional (2D) materials, and MoS 2 has been specifically utilized in electronic devices and integrated circuits. However, the direct synthesis of MoS 2 on traditional semiconductors, such as silicon, remains challenging due to the hydropho...
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Published in: | NPG Asia materials 2019-09, Vol.11 (1), p.1-9, Article 47 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Transition metal dichalcogenides (TMDs) are promising two-dimensional (2D) materials, and MoS
2
has been specifically utilized in electronic devices and integrated circuits. However, the direct synthesis of MoS
2
on traditional semiconductors, such as silicon, remains challenging due to the hydrophobic surface of nonoxide wafers (e.g., Si, GaAs, and InP). Herein, a novel, facile, reliable, and one-step method for the direct synthesis of single-crystal MoS
2
on a
p
-Si wafer via hybrid thermolysis is proposed. To demonstrate the applicability of the proposed method, a MoS
2
/
p
-Si heterojunction was fabricated and used for solar-driven hydrogen production. The as-fabricated
n
-MoS
2
/
p
-Si heterojunction exhibited a benchmark current density of −13.5 ± 1 mA/cm
2
at 0 V and an onset potential of +0.02 V. This method reliably and efficiently produced high-quality MoS
2
crystals on a wafer scale and is sufficiently simple to overcome the challenges associated with previous approaches. The method developed herein represents a tremendous advancement in the fabrication of 2D electronic devices.
2D semiconductors: Taming unruly crystals for green energy
Solar panels that catalyze the splitting of water into hydrogen fuel and oxygen can now be fabricated using a simple deposition process. Interfaces between two-dimensional molybdenum disulfide (2D-MoS
2
) and electron-poor silicon can split water using light, but only when the naturally random crystallization patterns of 2D-MoS
2
are inhibited. Researchers led by Ho Won Jang from Seoul National University and Soo Young Kim at Chung-Ang University, Seoul, have improved uniformity in this ultrathin material by initially coating silicon wafers with a molybdenum oxide precursor that adheres in smooth layers. By depositing a second, sulfur-rich coating and then heating the sample, the team produced uniform 2D-MoS
2
/silicon junctions down to 10-nanometer scales. The transparent device maintained a water-splitting photocurrent for over forty hours without degradation, thanks to the corrosion-resistant nature of high-quality 2D-MoS
2
crystals.
A direct synthesis method for high-quality MoS
2
thin films on p-Si wafer is reported herein. To increase the hydrophilicity of the p-Si wafer, MoO
3
was deposited before spin-coating. The (NH
4
)
2
MoS
4
precursor was easily coated onto the MoO
3
/p-Si and was converted to a MoS
2
/p-Si heterojunction via thermolysis. This method has the potential to be used in 2D electronic devi |
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ISSN: | 1884-4049 1884-4057 |
DOI: | 10.1038/s41427-019-0145-7 |