Photoelectrochemical applications of electrochemical deposition of Ni2+-doped FeS2 thin films

• Published in: Journal of materials science. Materials in electronics 2021-03, Vol.32 (5), p.6331-6343
• Main Authors: Prabukanthan, P., Sreedhar, M., Thamaraiselvi, S., Harichandran, G., Seenuvasakumaran, P., Hanafiah, Marlia M., Fernandez, Carlos
• Format: Article
• Language: English
• Subjects: Characterization and Evaluation of Materials; Charge transfer; Chemistry and Materials Science; Current carriers; Materials Science; Morphology; Optical and Electronic Materials; Photoelectric effect; Photoelectric emission; Pyrite; Thin films
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-021-05350-6

Different concentration (1–5 mol%) of Ni 2+ -doped FeS 2 thin films were deposited by facile ECD technique. XRD pattern Ni 2+ ion-doped FeS 2 thin films were cubic structure with the high intensity plane (2 0 0). HRSEM images show that the undoped with 1–2 mol% Ni 2+ -doped FeS 2 thin films were spherical-like morphology with aggregated grains. 3 mol% Ni 2+ -doped FeS 2 thin film was aggregated with smaller size grains. Electrochemical impedance analysis reveals that the minimum charge transfer resistance (69 Ω) is obtained for 3 mol% Ni 2+ ion-doped FeS 2 thin films with exceptional conductivity character compared to other samples. Photoelectrochemical test indicates that 3 mol% Ni 2+ ion-doped FeS 2 thin film generates enhanced photocurrent response and faster immigration of photoinduced charge carriers compared to the other samples. It has been observed from CV analysis; the optimized 3 mol% Ni 2+ -doped FeS 2 thin film delivers superior electrocatalytic performance of triiodide reduction.