Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD

A pulsed atomic-layer epitaxy growth technique has been introduced to substantially diminish the induced strain and oxygen incorporation on aluminium nitride films grown at standard pressure by metal organic chemical vapour deposition. The qualities of the as-deposited aluminium nitride films were s...

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Bibliographic Details
Published in:Journal of electronic materials 2021-04, Vol.50 (4), p.2313-2322
Main Authors: Abd Rahman, Mohd Nazri, Shuhaimi, Ahmad, Abdul Khudus, Muhammad I. M., Anuar, Afiq, Zainorin, Mohamed Zulhakim, Talik, Noor Azrina, Chanlek, Narong, Abd Majid, Wan Haliza
Format: Article
Language:English
Subjects:
Aluminum nitride
Characterization and Evaluation of Materials
Chemistry and Materials Science
Compressive properties
Electronics and Microelectronics
Epitaxial growth
Instrumentation
Materials Science
Metalorganic chemical vapor deposition
Nucleation
Optical and Electronic Materials
Organic chemicals
Organic chemistry
Original Research Article
Peak frequency
Photoelectrons
Photoluminescence
Raman spectroscopy
Sapphire
Solid State Physics
Spectrum analysis
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Summary:A pulsed atomic-layer epitaxy growth technique has been introduced to substantially diminish the induced strain and oxygen incorporation on aluminium nitride films grown at standard pressure by metal organic chemical vapour deposition. The qualities of the as-deposited aluminium nitride films were studied by varying the aluminium nitride nucleation layer growth temperature at 700°C, 800°C, 900°C, 1000°C and 1100°C, respectively. The compressive strain inside the as-deposited aluminium nitride films, induced by the hetero-epitaxial growth on sapphire, was investigated through Raman spectroscopy by focusing on the evolution of E 2 (high) peak frequency, where almost stress-free aluminium nitride films were attained at nucleation layer growth temperature of 1100°C. Then, the correlation between luminescence defect and level of foreign impurities respective to the varied nucleation layer growth temperatures were also systematically analysed through photoluminescence spectroscopy and x-ray photoelectron spectroscopy, respectively.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-021-08768-0