The electron-phonon coupling constant for single-layer graphene on metal substrates determined from He atom scattering

Recent theory has demonstrated that the value of the electron-phonon coupling strength λ can be extracted directly from the thermal attenuation (Debye-Waller factor) of helium atom scattering reflectivity. This theory is here extended to multivalley semimetal systems and applied to the case of graph...

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Bibliographic Details
Published in:Physical chemistry chemical physics : PCCP 2021-04, Vol.23 (13), p.7575-7585
Main Authors: Benedek, Giorgio, Manson, Joseph R, Miret-Artés, Salvador
Format: Article
Language:English
Subjects:
Attenuation
Bilayers
Binding
Boundary conditions
Coupling
Debye-Waller factor
Graphene
Helium atoms
Monolayers
Phonons
Scattering
Substrates
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Summary:Recent theory has demonstrated that the value of the electron-phonon coupling strength λ can be extracted directly from the thermal attenuation (Debye-Waller factor) of helium atom scattering reflectivity. This theory is here extended to multivalley semimetal systems and applied to the case of graphene on different metal substrates and graphite. It is shown that λ rapidly increases for decreasing graphene-substrate binding strength. Two different calculational models are considered which produce qualitatively similar results for the dependence of λ on binding strength. These models predict, respectively, values of λ HAS = 0.89 and 0.32 for a hypothetical flat free-standing single-layer graphene with cyclic boundary conditions. The method is suitable for analysis and characterization of not only the graphene overlayers considered here, but also other layered systems such as twisted graphene bilayers. A theory, previously formulated for conducting surfaces, is extended to extract the electron-phonon coupling strength λ for graphene supported on metal substrates from the thermal attenuation (Debye-Waller factor) of helium scattering reflectivity.
ISSN:1463-9076
1463-9084
DOI:10.1039/d0cp04729e