Room-temperature negative magnetoresistance of helium-ion-irradiated defective graphene in the strong Anderson localization regime

Anderson localization (AL), a major topic in condensed matter physics, has been extensively studied. Since the discovery of graphene, its unique AL in Dirac materials, particularly weak localization (WL), has been studied intensively. Strong localization (SL) has also been investigated in graphene w...

Full description

Saved in:
Bibliographic Details
Published in:Carbon (New York) 2021-04, Vol.175, p.87-92
Main Authors: Iwasaki, Takuya, Nakamura, Shu, Agbonlahor, Osazuwa G., Muruganathan, Manoharan, Akabori, Masashi, Morita, Yoshifumi, Moriyama, Satoshi, Ogawa, Shinichi, Wakayama, Yutaka, Mizuta, Hiroshi, Nakaharai, Shu
Format: Article
Language:English
Subjects:
Anderson localization
Batteries
Condensed matter physics
Defective graphene
Defects
Field effect transistors
Graphene
Graphite
Heat transfer
Helium ion irradiation
Irradiation
Magnetoresistance
Magnetoresistivity
Negative magnetoresistance
Parameters
Quantum dots
Room temperature
Semiconductor devices
Variable range hopping
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Anderson localization (AL), a major topic in condensed matter physics, has been extensively studied. Since the discovery of graphene, its unique AL in Dirac materials, particularly weak localization (WL), has been studied intensively. Strong localization (SL) has also been investigated in graphene with intentionally introduced defects. The precise control of spacing/strength of defects using conventional methods is challenging; thus, He-ion-irradiation is a promising technology. However, magnetotransport, a sensitive tool to probe AL, has not yet been studied for He-ion-irradiated graphene. Herein, we systematically investigate the magnetotransport of He-ion-irradiated graphene. We observe negative magnetoresistance (MR) due to SL-dominated hopping transport. By systematically tuning the device parameters, negative MR at room temperature is first revealed for graphene field-effect transistor devices. Our study reveals carrier localization via searching in the multidimensional parameter space of Dirac materials, contributing to the development of fundamental AL physics and magnetoelectronic device applications. [Display omitted]
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2020.12.076