Modeling electrical conduction in resistive-switching memory through machine learning

Traditional physical-based models have generally been used to model the resistive-switching behavior of resistive-switching memory (RSM). Recently, vacancy-based conduction-filament (CF) growth models have been used to model device characteristics of a wide range of RSM devices. However, few have fo...

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Bibliographic Details
Published in:AIP advances 2021-07, Vol.11 (7), p.075315-075315-8
Main Authors: Periasamy, Karthekeyan, Wang, Qishen, Fu, Yi, Go, Shao-Xiang, Jiang, Yu, Bajalovic, Natasa, Wang, Jer-Chyi, Loke, Desmond. K.
Format: Article
Language:English
Subjects:
Accuracy
Aluminum
Devices
Electric potential
Electrical conduction
Growth models
Machine learning
Mathematical models
Model accuracy
Parameters
Switching
Vacancies
Voltage
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Summary:Traditional physical-based models have generally been used to model the resistive-switching behavior of resistive-switching memory (RSM). Recently, vacancy-based conduction-filament (CF) growth models have been used to model device characteristics of a wide range of RSM devices. However, few have focused on learning the other-device-parameter values (e.g., low-resistance state, high-resistance state, set voltage, and reset voltage) to compute the compliance-current (CC) value that controls the size of CF, which can influence the behavior of RSM devices. Additionally, traditional CF growth models are typically physical-based models, which can show accuracy limitations. Machine learning holds the promise of modeling vacancy-based CF growth by learning other-device-parameter values to compute the CC value with excellent accuracy via examples, bypassing the need to solve traditional physical-based equations. Here, we sidestep the accuracy issues by directly learning the relationship between other-device-parameter values to compute the CC values via a data-driven approach with high accuracy for test devices and various device types using machine learning. We perform the first modeling with machine-learned device parameters on aluminum-nitride-based RSM devices and are able to compute the CC values for nitrogen-vacancy-based CF growth using only a few RSM device parameters. This model may now allow the computation of accurate RSM device parameters for realistic device modeling.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0052909