Van der Waals contact between 2D magnetic VSe2 and transition metals and demonstration of high-performance spin-field-effect transistors

• Published in: Science China materials 2021-11, Vol.64 (11), p.2786-2794
• Main Authors: Zhu, Jiaduo, Chen, Xing, Shang, Wei, Ning, Jing, Wang, Dong, Zhang, Jincheng, Hao, Yue
• Format: Article
• Language: English
• Subjects: Bias; Chemistry and Materials Science; Chemistry/Food Science; Coupling; Density functional theory; Field effect transistors; Iron; Magnetic moments; Materials Science; Nickel; Quantum transport; Semiconductor devices; Transistors; Transition metals
• ISSN: 2095-8226; 2199-4501
• DOI: 10.1007/s40843-021-1657-9

This study used density functional theory and the quantum transport method to investigate the interfacial coupling and spin transport of transition metals (TMs) with a Fe, Co, and Ni/2H-VSe 2 hybrid nanostructure. Because the indirect coupling of TM-Se-V led to an obvious reduction of the magnetic moment and the disappearance of the half-metal characteristics of 2H-VSe 2 , the expected spin-filtering effect of individual TMs and 2H-VSe 2 deteriorated at the contact region. Nevertheless, all the TM/2H-VSe 2 -based dual-probe devices exhibited an interesting bias-dependent spin-injection efficiency with a maximum output spin-polarized current of 666 mA mm −1 in Co/2H-VSe 2 . The proposed TM/2H-VSe 2 -based spin-field-effect transistor demonstrated outstanding performance. The Ni/2H-VSe 2 -based transistor achieved a maximum output spin-polarized current of 3117 mA mm −1 and demonstrated a good switching characteristic of 106 mV dec −1 . Importantly, all transistors achieved a widely tunable scale of spin extraction efficiency ranging consistently between 96% and −92% with gate bias. These results indicate a promising candidate for use in high-performance spintronic devices.