2-D Quantum Confined Threshold Voltage Shift Model for Asymmetric Short-Channel Junctionless Quadruple-Gate FETs

This article presents a compact quantum threshold voltage ( {V}_{\text {th}} ) shift model for a junctionless (JL) quadruple-gate (QG) FET in subthreshold region. Starting from our previous compact model for JL QG FET, the potential and the classical electron density are calculated. Considering 2-D...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2021-11, Vol.68 (11), p.5504-5510
Main Authors: Bae, Min Soo, Yun, Ilgu
Format: Article
Language:English
Subjects:
Asymmetric structure
Circuits
compact model
Computational modeling
Electric potential
Electron density
Energy levels
Field effect transistors
Harmonic oscillators
Integrated circuit modeling
junctionless (JL) quadruple-gate (QG) FET
Mathematical model
Numerical models
Perturbation
Quantum confinement
quantum effect
Quantum system
Quantum theory
Quantum wells
subthreshold region
technology computer-aided design (TCAD)
Threshold voltage
Two dimensional models
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Summary:This article presents a compact quantum threshold voltage ( {V}_{\text {th}} ) shift model for a junctionless (JL) quadruple-gate (QG) FET in subthreshold region. Starting from our previous compact model for JL QG FET, the potential and the classical electron density are calculated. Considering 2-D quantum confinement, four types of quantum systems are modeled as a combination of quantum harmonic oscillator (QHO) and quantum well with bottom perturbation potential, depending on the device dimensions. Electron subband energy level for each quantum system is analytically derived to get quantum electron density. The quantum {V}_{\text {th}} shift model is obtained by the ratio of quantum and classical electron line density. The modeling results are validated by 3-D numerical device simulation. It is shown that the proposed model can accurately capture the quantum {V}_{\text {th}} shift in JL QG FET where both fin width and height are 3 nm. Therefore, the proposed {V}_{\text {th}} shift model can be used for quantum corrections for circuit simulation of JL QG FETs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2021.3089451