Pulsed laser deposition growth of ultra-wide bandgap GeO2 film and its optical properties

In this paper, we report the direct growth of ultra-wide bandgap GeO2 film on the m-plane sapphire substrate by pulsed laser deposition. Raman scattering and x-ray diffraction measurements confirm that the obtained GeO2 film has a (001)-oriented rutile structure mixed with the amorphous phase, and t...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2021-11, Vol.119 (18)
Main Authors: Deng, Gaofeng, Saito, Katsuhiko, Tanaka, Tooru, Arita, Makoto, Guo, Qixin
Format: Article
Language:English
Subjects:
Applied physics
Blue shift
Germanium oxides
Optical properties
Optoelectronic devices
Photoelectrons
Photoluminescence
Photonic band gaps
Plane strain
Pulsed laser deposition
Pulsed lasers
Raman spectra
Room temperature
Sapphire
Spectrum analysis
Substrates
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, we report the direct growth of ultra-wide bandgap GeO2 film on the m-plane sapphire substrate by pulsed laser deposition. Raman scattering and x-ray diffraction measurements confirm that the obtained GeO2 film has a (001)-oriented rutile structure mixed with the amorphous phase, and the film has an out-of-plane strain of –0.28% along the c direction. Transmittance spectra and x-ray photoelectron spectroscopy measurements determine that the transparent GeO2 film has an ultra-wide bandgap of about 5.1 eV. Room temperature photoluminescence spectrum exhibits a broad blue–green emission band dominated by two peaks at about 2.4 and 2.8 eV. With the temperature decreasing to 21 K, the peak intensities increase exponentially accompanied by a slight blue-shift in the peak position. We believe that these findings will pave the way for applications of the wide-bandgap GeO2 film in power and optoelectronic devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0071918