Dirac-Source Diode with Sub-unity Ideality Factor

An increase in power consumption necessitates a low-power circuit technology to extend Moore's law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been rea...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2021-12
Main Authors: Gyuho Myeong, Shin, Wongil, Kim, Seungho, Lim, Hongsik, Boram, Kim, Jin, Taehyeok, Sung, Kyunghwan, Park, Jihoon, Fuhrer, Michael S, Watanabe, Kenji, Taniguchi, Takashi, Liu, Fei, Cho, Sungjae
Format: Article
Language:English
Subjects:
Circuits
Diode rectifiers
Electronic circuits
Field effect transistors
Graphene
Moore's law
Power consumption
Power semiconductor devices
Room temperature
Schottky diodes
Transistors
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:An increase in power consumption necessitates a low-power circuit technology to extend Moore's law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power diode rectifier, which breaks the thermionic limit of an ideality factor (n) of 1 at room temperature, has not been proposed yet. In this study, we have realised a DS Schottky diode, which exhibits a steep-slope characteristic curve, by utilising the linear density of states (DOSs) of graphene. For the developed DS Schottky diode, n
ISSN:2331-8422
DOI:10.48550/arxiv.2112.00924