Near ultraviolet photonic integrated lasers based on silicon nitride

• Published in: arXiv.org 2022-03
• Main Authors: Anat Siddharth, Wunderer, Thomas, Lihachev, Grigory, Voloshin, Andrey S, Haller, Camille, Rui Ning Wang, Teepe, Mark, Yang, Zhihong, Liu, Junqiu, Riemensberger, Johann, Grandjean, Nicolas, Johnson, Noble, Kippenberg, Tobias J
• Format: Article
• Language: English
• Subjects: Atomic clocks; Fiber lasers; Frequency locking; Gallium nitrides; Group III-V semiconductors; Lasers; Near infrared radiation; Noise; Noise reduction; Photonics; Quantum computing; Semiconductor lasers; Silicon nitride
• ISSN: 2331-8422
• DOI: 10.48550/arxiv.2112.02372

Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic integrated resonators have allowed to outperform bulk external diode and fiber lasers in both phase noise and frequency agility in the 1550 nm-telecommunication window. Here, we demonstrate for the first time a hybrid integrated laser composed of a gallium nitride (GaN) based laser diode and a silicon nitride photonic chip-based microresonator operating at record low wavelengths as low as 410 nm in the near-ultraviolet wavelength region suitable for addressing atomic transitions of atoms and ions used in atomic clocks, quantum computing, or for underwater LiDAR. Using self-injection locking to a high Q (0.4 \(\times\) 10\(^6\)) photonic integrated microresonator we observe a phase noise reduction of the Fabry-Pérot laser at 461 nm by a factor greater than 100\(\times\), limited by the device quality factor and back-reflection.