Two-Dimensional MoSi2N4: An Excellent 2-D Semiconductor for Field-Effect Transistors

We report the performance of field-effect transistors (FETs), composed of monolayer of recently synthesized layered two-dimensional (2-D) MoSi 2 N 4 as channel material, using the first principles quantum transport simulations. The devices' performance is assessed as per the International Roadm...

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Bibliographic Details
Published in:	IEEE transactions on electron devices 2022-01, Vol.69 (1), p.406-413
Main Authors:	Nandan, Keshari, Ghosh, Barun, Agarwal, Amit, Bhowmick, Somnath, Chauhan, Yogesh S.
Format:	Article
Language:	English
Subjects:	Carbon nanotubes Density functional theory (DFT) Discrete Fourier transforms Field effect transistors field-effect transistors (FETs) First principles Lattices Logic circuits Logic gates maximally localized Wannier functions (MLWFs) monolayer (ML) nonequilibrium Green’s function (NEGF) Performance evaluation Photonic band gap Quantum transport quantum transport (QT) Semiconductor devices Transistors Tunneling Two dimensional materials
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