Growth optimization and device integration of narrow-bandgap graphene nanoribbons

The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices b...

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Bibliographic Details
Published in:arXiv.org 2022-02
Main Authors: Gabriela Borin Barin, Sun, Qiang, Marco Di Giovannantonio, Cheng-Zhuo, Du, Xiao-Ye, Wang, Juan Pablo Llinas, Mutlu, Zafer, Lin, Yuxuan, Wilhelm, Jan, Overbeck, Jan, Daniels, Colin, Lamparski, Michael, Sahabudeen, Hafeesudeen, Perrin, Mickael L, Urgel, José I, Mishra, Shantanu, Kinikar, Amogh, Widmer, Roland, Stolz, Samuel, Bommert, Max, Pignedoli, Carlo, Feng, Xinliang, Calame, Michel, Müllen, Klaus, Narita, Akimitsu, Meunier, Vincent, Bokor, Jeffrey, Fasel, Roman, Ruffieux, Pascal
Format: Article
Language:English
Subjects:
Electronic devices
Energy gap
Field effect transistors
Graphene
High vacuum
Magnetic properties
Nanoribbons
Optical properties
Optimization
Precursors
Room temperature
Semiconductor devices
Substitutes
Switching
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Summary:The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, we study the growth, characterization, and device integration of 5-atom wide armchair GNRs (5-AGNRs), which are expected to have an optimal band gap as active material in switching devices. 5-AGNRs are obtained via on-surface synthesis under ultra-high vacuum conditions from Br- and I-substituted precursors. We show that the use of I-substituted precursors and the optimization of the initial precursor coverage quintupled the average 5-AGNR length. This significant length increase allowed us to integrate 5-AGNRs into devices and to realize the first field-effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. Our study highlights that optimized growth protocols can successfully bridge between the sub-nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.
ISSN:2331-8422
DOI:10.48550/arxiv.2202.01101