Stochastic model applied to plasma-surface interaction's simulation

The kinetic approach of the nonequilibrium distribution functions (contrasted with the both sizes and coordinates) were calculated for liquid thin film islands as well as for gaseous-vacancy defects into lattice (blisters). The model based on Ito-Stratonovich stochastic differential equations soluti...

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Bibliographic Details
Published in:The European physical journal. D, Atomic, molecular, and optical physics Atomic, molecular, and optical physics, 2006-04, Vol.38 (1), p.143-149
Main Authors: Bondareva, A. L., Zmievskaya, G. I., Levchenko, V. D.
Format: Article
Language:English
Subjects:
Blistering
Blisters
Computer simulation
Defects
Differential equations
Distribution functions
Ionizing radiation
Lattice strain
Lattice vacancies
Mathematical analysis
Physics
Stochastic models
Thin films
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Summary:The kinetic approach of the nonequilibrium distribution functions (contrasted with the both sizes and coordinates) were calculated for liquid thin film islands as well as for gaseous-vacancy defects into lattice (blisters). The model based on Ito-Stratonovich stochastic differential equations solution, was applied to the defects migration and to defects fluctuation stage of cluster formation. The material porosity and lattice strain values were estimated. Computer simulation results such as surface damaging, the structural and phase alternation of state surface transformation can be compared with experiments of impact powerful pulse plasma fluxes of nano- and micro-second duration ionizing radiation.
ISSN:1434-6060
1434-6079
DOI:10.1140/epjd/e2006-00044-0