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Silicon-germanium interdiffusion and interfaces in self-assembled quantum dots

A scanning transmission electron microscope (STEM) study of silicon–germanium alloying using annular dark field (ADF) or Z-contrast imaging and electron energy loss spectroscopy (EELS) is presented. Results and techniques are discussed. Growth of 11 equivalent monolayers of germanium on silicon at 6...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2007-01, Vol.86 (1), p.1-9
Main Authors: VANFLEET, R. R, BASILE, D. P, KAMINS, T. I, SILCOX, J, WILLIAMS, R. Stanley
Format: Article
Language:English
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Summary:A scanning transmission electron microscope (STEM) study of silicon–germanium alloying using annular dark field (ADF) or Z-contrast imaging and electron energy loss spectroscopy (EELS) is presented. Results and techniques are discussed. Growth of 11 equivalent monolayers of germanium on silicon at 650 °C results in dome-shaped islands or quantum dots that contain up to ∼40% silicon. The interface between the as-grown island and substrate shows a highly disordered or amorphous zone ∼1.5-nm wide directly under the island. Annealing for 60 min at 650 °C gives larger pyramidal islands with diffuse crystalline interfaces and an equilibrium distribution of up to ∼70% silicon in the islands.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-006-3724-8