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In situ synergistic strategy of sacrificial intermedium for scalable-manufactured and controllable layered double hydroxide film

Layered double hydroxides (LDHs), a class of two-dimensional (2D) brucite-like layers, have been effectively applied in diverse fields. However, the current synthesis methods restrict the in situ scaling-up and tunable production of LDH-based materials. Inspired by the growing characteristic of “ Br...

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Bibliographic Details
Published in:Science China materials 2022, Vol.65 (7), p.1842-1852
Main Authors: Zhu, Yi-Xing, Song, Guang-Ling, Zheng, Da-Jiang, Serdechnova, Maria, Blawert, Carsten, Zheludkevich, Mikhail L.
Format: Article
Language:English
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Summary:Layered double hydroxides (LDHs), a class of two-dimensional (2D) brucite-like layers, have been effectively applied in diverse fields. However, the current synthesis methods restrict the in situ scaling-up and tunable production of LDH-based materials. Inspired by the growing characteristic of “ Bryophyllum pinnatum ”, a sacrificial co-sputtered Zn−Al transition layer was introduced for the first time to in situ grow a scalable-manufactured and thickness-controllable LDH film on arbitrary substrate materials with flexible shapes through “partial dissolution” and “solution infiltration” processes. Diverse LDH films could be tailored by the creative regulation of the component, structure and surface state of the transition layer. Results showed that the as-prepared LDH film had strong mechanical robustness under harsh abrasion conditions due to its large thickness and multi-level microstructure. Moreover, a series of galvanic couple model experiments based on Zn/Al single-metal transition layers were designed to solve the real-time monitoring issue in the complex hydrothermal solution. This work not only develops a new strategy to design and grow in situ LDH films with multifaceted features, but also reveals sophisticated LDH formation mechanisms. Hence, the findings of this study may broaden the practical application of LDH-based materials toward advanced and smart devices.
ISSN:2095-8226
2199-4501
DOI:10.1007/s40843-021-1975-y