The Investigation of Electrical Characteristics for Carbon Nano-Tubes as Through Silicon Via in Multi-Layer Stacking Scheme With an Optimized Structure

Through silicon via (TSV) is the key technology for 3-D integrated circuits (3-DICs) which could vertically stack homogeneous or heterogeneous dies with the high performance and density. To evaluate the electrical characteristics of TSV at the high-frequency transmission, the skin effect and surface...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2022-09, Vol.69 (9), p.5386-5390
Main Authors: Chen, K. -C., Basu, Nilabh, Chen, S. -C., Lee, M. -H., Liao, M. -H.
Format: Article
Language:English
Subjects:
3-D integrated circuits (3-DICs)
CAD
Carbon nano-tubes (CNTs)
Carbon nanotubes
Computer aided design
Copper
Equivalent circuits
Fillers
Frequency analysis
Frequency domain analysis
Integrated circuits
Interconnections
Multilayers
Resistance
Rough surfaces
Skin effect
Stacking
Surface resistance
Surface roughness
surface roughness effect
Surface roughness effects
through silicon via (TSV)
Through-silicon vias
Tubes
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Summary:Through silicon via (TSV) is the key technology for 3-D integrated circuits (3-DICs) which could vertically stack homogeneous or heterogeneous dies with the high performance and density. To evaluate the electrical characteristics of TSV at the high-frequency transmission, the skin effect and surface roughness effect are necessary to be considered. However, these effects would significantly result in the TSV equivalent resistance under the high operating frequency. Thus, it is important to investigate the carbon nano tubes (CNTs) TSV which has less skin effect intrinsically. In this work, we analyze the advantage of CNTs as TSV compared to the conventional filling materials such as copper (Cu). Furtherly, we also propose the equivalent circuit model of TSV and its multi-layer structure to simulate the electrical behaviors with different TSV pitch, height, diameter, and stacking layers by using ANSYS designer and high-frequency structure simulator (HFSS). Based on the frequency-domain analysis, it can be found that CNTs TSV has the lower frequency-dependent loss than Cu due to the lower equivalent resistance. In a summary, CNTs could be a promising TSV filling material at the high-speed transmission frequency based on our study.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2022.3193917