Analytic study of electrical, thermal and thermoelectric properties of ultra-thin InxGa1-xN nanowires

The doping density, temperature, wire thickness, indium content, and surface roughness effects on electronic, thermal, and thermoelectric transport coefficients of ultra-thin InGaN/GaN nanowires are investigated by applying the analytic procedure to polar semiconductors where piezoelectric effect an...

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Bibliographic Details
Published in:The European physical journal. B, Condensed matter physics Condensed matter physics, 2022, Vol.95 (9)
Main Authors: Mousavi, S., Davatolhagh, S., Moradi, M.
Format: Article
Language:English
Subjects:
Algorithms
Boltzmann transport equation
Complex Systems
Condensed Matter Physics
Electron mobility
Fluid- and Aerodynamics
Indium gallium nitrides
Mathematical analysis
Nanowires
Phonons
Physics
Physics and Astronomy
Piezoelectricity
Regular Article - Solid State and Materials
Relaxation time
Room temperature
Seebeck effect
Solid State Physics
Surface roughness
Surface roughness effects
Thermal conductivity
Thermoelectricity
Transport properties
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Summary:The doping density, temperature, wire thickness, indium content, and surface roughness effects on electronic, thermal, and thermoelectric transport coefficients of ultra-thin InGaN/GaN nanowires are investigated by applying the analytic procedure to polar semiconductors where piezoelectric effect and polar optical phonon scatterings also play significant roles. We calculate the low-field electron mobility, electronic Seebeck coefficient, and lattice thermal conductivity based on relaxation time approximation within linear response theory and Boltzmann transport equation. The dispersion of longitudinal acoustic phonons and the corresponding group velocities in In x Ga 1 - x N nanowires are determined by applying the xyz-algorithm. The highest room temperature ZT = 0.25 is achieved for 4-nm-thick nanowire that is an order of magnitude larger than the bulk ZT value of 0.02 and the ZT value of the same In 0.1 Ga 0.9 N nanowire at T = 800 K reaches a magnitude of 0.55. The effect of nanostructuring is found to be more pronounced than alloying. Graphical abstract
ISSN:1434-6028
1434-6036
DOI:10.1140/epjb/s10051-022-00408-8