Loading…
Research on the electrochemical properties of vanadium boride coated on the surface of NCM811
LiNi0.8Co0.1Mn0.1O2 (NCM811) has attracted much attention because of its high specific capacity. However, its poor electrical conductivity and the side reactions at the electrode/electrolyte interface result in unsatisfactory rate and cycling performance. A wet coating method is adapted to deposit a...
Saved in:
Published in: | Journal of alloys and compounds 2022-12, Vol.927, p.166967, Article 166967 |
---|---|
Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | LiNi0.8Co0.1Mn0.1O2 (NCM811) has attracted much attention because of its high specific capacity. However, its poor electrical conductivity and the side reactions at the electrode/electrolyte interface result in unsatisfactory rate and cycling performance. A wet coating method is adapted to deposit a layer of vanadium boride (V-B) compounds on the surface of NCM811 to improve its performance. The capacity retention of NCM@ 1 V-B is increased about 15% after 500 cycles at 1 C, compared to the capacity retention of NCM. SEM and TEM images show that the thickness of the NCM@ 1 V-B coating layer is about 2.5 nm, which effectively inhibits the cracking of the surface microstructure at the cathode surface and reduces side reactions at the electrode/electrolyte interface. Thinner SEI film with less F-containing species forms on the electrode surface, less volume changes occurring the phase transition are responsible for the improved cyclability and rate capability for V-B coated NCM.
•The electrochemical performance of NCM811 was improved by coated with vanadium boride (V-B) compounds.•V-B layer can inhibit cracking of material surface and reduce side reactions at electrode/electrolyte interface.•V-B coating layer can stabilize the SEI film on the surface and suppress the increase of the charge transfer resistance. |
---|---|
ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2022.166967 |